IndiumV3, Russie, Analysis, bibRecord, 000152

InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications

Identifieur interne : 000152 ( Russie/Analysis ); précédent : 000151; suivant : 000153

InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications

Auteurs : RBID : Pascal:09-0182802

Descripteurs français

Pascal (Inist)
- Diode électroluminescente, Epitaxie jet moléculaire, Rayonnement IR moyen, Photoluminescence, Température ambiante, Antimoine, Electroluminescence, Antimoniure d'indium, Point quantique, Couche ultramince, Dispositif optoélectronique, Fabrication microélectronique, 8107T, 8535B, 8560J, 7867, InSb, Sb, 8540H.
Wicri :
- concept : Antimoine.

English descriptors

KwdEn :
- Ambient temperature, Antimony, Electroluminescence, Indium antimonides, Light emitting diodes, Microelectronic fabrication, Mid infrared radiation, Molecular beam epitaxy, Optoelectronic devices, Photoluminescence, Quantum dots, Ultrathin films.

Abstract

We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix which exhibit intense mid-infrared photoluminescence up to room temperature. The InSb QD sheets were formed by briefly exposing the surface to an antimony flux (Sb₂) exploiting an As-Sb anion exchange reaction. Light emitting diodes were fabricated using 10 InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 μm at room temperature.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 005872
to stream Main, to step Repository: 005200
to stream Russie, to step Extraction: 000152

Links to Exploration step

Pascal:09-0182802

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications</title>
<author><name sortKey="Carrington, P J" uniqKey="Carrington P">P. J. Carrington</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, Lancaster University</s1>
<s2>Lancaster LA1 4YB</s2>
<s3>GBR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Royaume-Uni</country>
<wicri:noRegion>Lancaster LA1 4YB</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Solov Ev, V A" uniqKey="Solov Ev V">V. A. Solov Ev</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, Lancaster University</s1>
<s2>Lancaster LA1 4YB</s2>
<s3>GBR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Royaume-Uni</country>
<wicri:noRegion>Lancaster LA1 4YB</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>loffe Physico-Technical Institute, Polytekhnicheskaya 26</s1>
<s2>St. Petersburg 194021</s2>
<s3>RUS</s3>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>St. Petersburg 194021</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Zhuang, Q" uniqKey="Zhuang Q">Q. Zhuang</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, Lancaster University</s1>
<s2>Lancaster LA1 4YB</s2>
<s3>GBR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Royaume-Uni</country>
<wicri:noRegion>Lancaster LA1 4YB</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Ivanovo, S V" uniqKey="Ivanovo S">S. V. Ivanovo</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>loffe Physico-Technical Institute, Polytekhnicheskaya 26</s1>
<s2>St. Petersburg 194021</s2>
<s3>RUS</s3>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>St. Petersburg 194021</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Krier, A" uniqKey="Krier A">A. Krier</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, Lancaster University</s1>
<s2>Lancaster LA1 4YB</s2>
<s3>GBR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Royaume-Uni</country>
<wicri:noRegion>Lancaster LA1 4YB</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">09-0182802</idno>
<date when="2009">2009</date>
<idno type="stanalyst">PASCAL 09-0182802 INIST</idno>
<idno type="RBID">Pascal:09-0182802</idno>
<idno type="wicri:Area/Main/Corpus">005872</idno>
<idno type="wicri:Area/Main/Repository">005200</idno>
<idno type="wicri:Area/Russie/Extraction">000152</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0959-8324</idno>
<title level="j" type="abbreviated">Microelectronics j.</title>
<title level="j" type="main">Microelectronics journal</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ambient temperature</term>
<term>Antimony</term>
<term>Electroluminescence</term>
<term>Indium antimonides</term>
<term>Light emitting diodes</term>
<term>Microelectronic fabrication</term>
<term>Mid infrared radiation</term>
<term>Molecular beam epitaxy</term>
<term>Optoelectronic devices</term>
<term>Photoluminescence</term>
<term>Quantum dots</term>
<term>Ultrathin films</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Diode électroluminescente</term>
<term>Epitaxie jet moléculaire</term>
<term>Rayonnement IR moyen</term>
<term>Photoluminescence</term>
<term>Température ambiante</term>
<term>Antimoine</term>
<term>Electroluminescence</term>
<term>Antimoniure d'indium</term>
<term>Point quantique</term>
<term>Couche ultramince</term>
<term>Dispositif optoélectronique</term>
<term>Fabrication microélectronique</term>
<term>8107T</term>
<term>8535B</term>
<term>8560J</term>
<term>7867</term>
<term>InSb</term>
<term>Sb</term>
<term>8540H</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Antimoine</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix which exhibit intense mid-infrared photoluminescence up to room temperature. The InSb QD sheets were formed by briefly exposing the surface to an antimony flux (Sb<sub>2</sub>
) exploiting an As-Sb anion exchange reaction. Light emitting diodes were fabricated using 10 InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 μm at room temperature.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0959-8324</s0>
</fA01>
<fA03 i2="1"><s0>Microelectronics j.</s0>
</fA03>
<fA05><s2>40</s2>
</fA05>
<fA06><s2>3</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Workshop of Recent Advances on Low Dimensional Structures and Devices (WRA-LDSD)</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>CARRINGTON (P. J.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>SOLOV'EV (V. A.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>ZHUANG (Q.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>IVANOVO (S. V.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>KRIER (A.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>SAIDANE (Abdelkader)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Physics Department, Lancaster University</s1>
<s2>Lancaster LA1 4YB</s2>
<s3>GBR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>loffe Physico-Technical Institute, Polytekhnicheskaya 26</s1>
<s2>St. Petersburg 194021</s2>
<s3>RUS</s3>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>Ecole Normale Supérieure d'Enseignement Technique (ENSET) d'Oran</s1>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA20><s1>469-472</s1>
</fA20>
<fA21><s1>2009</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13880</s2>
<s5>354000187059480230</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2009 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>9 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>09-0182802</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Microelectronics journal</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix which exhibit intense mid-infrared photoluminescence up to room temperature. The InSb QD sheets were formed by briefly exposing the surface to an antimony flux (Sb<sub>2</sub>
) exploiting an As-Sb anion exchange reaction. Light emitting diodes were fabricated using 10 InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 μm at room temperature.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A07T</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>001D03F15</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B70H55</s0>
</fC02>
<fC02 i1="04" i2="X"><s0>001D03F18</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Diode électroluminescente</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Light emitting diodes</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Rayonnement IR moyen</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Mid infrared radiation</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Radiación infrarroja media</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Température ambiante</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Ambient temperature</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Antimoine</s0>
<s2>NC</s2>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Antimony</s0>
<s2>NC</s2>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Electroluminescence</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Electroluminescence</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Antimoniure d'indium</s0>
<s2>NK</s2>
<s5>22</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Indium antimonides</s0>
<s2>NK</s2>
<s5>22</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Point quantique</s0>
<s5>23</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Quantum dots</s0>
<s5>23</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Couche ultramince</s0>
<s5>24</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Ultrathin films</s0>
<s5>24</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Dispositif optoélectronique</s0>
<s5>31</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Optoelectronic devices</s0>
<s5>31</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Fabrication microélectronique</s0>
<s5>32</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Microelectronic fabrication</s0>
<s5>32</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Fabricación microeléctrica</s0>
<s5>32</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>8107T</s0>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>8535B</s0>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>8560J</s0>
<s4>INC</s4>
<s5>58</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>7867</s0>
<s4>INC</s4>
<s5>59</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>InSb</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Sb</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>8540H</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fN21><s1>131</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>Workshop of Recent Advances on Low Dimensional Structures and Devices (WRA-LDSD)</s1>
<s3>Nottingham GBR</s3>
<s4>2008-04-07</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000152 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd -nk 000152 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    RBID
   |clé=     Pascal:09-0182802
   |texte=   InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications

InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri